In order to study the treatment technique used in Chu - style Ge having patterns from the Eastern Zhou Dynasty, metallographic microscope, scanning electron microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and Electron Back - Scatter Diffraction (EBSD) were used to examine the composition, microstructure, phase constitution and manufacture techniques of patterns in the Chu - style Ge collection from Shanghai Museum. It was found that the thickness of high - tin content layers of Chu - style Ge is not uniform, although most of the layers are around 10 micrometers thiclc In some areas the high - tin layer are composed of 4 different phases: [eta] phase, [epsilon] phase, [delta] phase, and ([alpha] + [delta]) phase. No obvious boundary was observed between the high - tin layer and its substrate. Based on previous research on high - tin techniques, it was found that patterns of the Chu - style Ge share the same characteristics as technique as those seen in other areas, namely that they were made by hot - tinning. However, the Chu - style Ge have their own distinct regional tinning control techniques.